RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

Complex functional oxide heterostructures

This article presents a review of some salient aspects of a broad class of functional materials, namely complex oxides. These materials, exemplified by the rare earth manganites, superconducting cuprates and more recently multiferroics, are characterized by a complex crystal chemistry, that is central to competing/ cooperating spin, charge, orbital and lattice degrees of freedom. In addition to...

Resistive switching in zinc–tin-oxide

Bipolar resistive switching is demonstrated in the amorphous oxide semiconductor zinc–tin-oxide (ZTO). A gradual forming process produces improved switching uniformity. Al/ZTO/Pt crossbar devices show switching ratios greater than 10, long retention times, and good endurance. The resistive switching in these devices is consistent with a combined filamentary/interfacial mechanism. Overall, ZTO s...

Chemical insight into electroforming of resistive switching manganite heterostructures.

We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictl...

Ultrafast strain engineering in complex oxide heterostructures.

We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO(3) epitaxial thin films is observed as a structural distortion propagates across the int...

Conducting Nanofilaments in Metal Oxide Resistive Switching Memory